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Freescale Semiconductor Technical Data
Document Number: MRF6P23190H Rev. 2, 3/2007
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
Designed for CDMA base station applications with frequencies from 2300 to 2400 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications. To be used in Class AB and Class C for WLL applications. * Typical 2 - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1900 mA, Pout = 40 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain -- 14 dB Drain Efficiency -- 23.5% IM3 @ 10 MHz Offset -- - 37.5 dBc in 3.84 MHz Channel Bandwidth ACPR @ 5 MHz Offset -- - 41 dBc in 3.84 MHz Channel Bandwidth * Capable of Handling 10:1 VSWR, @ 28 Vdc, 2340 MHz, 190 Watts CW Output Power Features * Characterized with Series Equivalent Large - Signal Impedance Parameters * Internally Matched for Ease of Use * Qualified Up to a Maximum of 32 VDD Operation * Integrated ESD Protection * Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications * RoHS Compliant * In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
MRF6P23190HR6
2300 - 2400 MHz, 40 W AVG., 28 V 2 x W - CDMA LATERAL N - CHANNEL RF POWER MOSFET
CASE 375D - 05, STYLE 1 NI - 1230
Table 1. Maximum Ratings
Rating Drain - Source Voltage Gate - Source Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature CW Operation @ TC = 25C Derate above 25C Symbol VDSS VGS Tstg TC TJ CW Value - 0.5, +68 - 0.5, +12 - 65 to +150 150 200 250 1.3 Unit Vdc Vdc C C C W W/C
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Case Temperature 100C, 160 W CW Case Temperature 83C, 40 W CW Symbol RJC Value (1,2) 0.22 0.24 Unit C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955.
(c) Freescale Semiconductor, Inc., 2007. All rights reserved.
MRF6P23190HR6 1
RF Device Data Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1C (Minimum) A (Minimum) III (Minimum)
Table 4. Electrical Characteristics (TC = 25C unless otherwise noted)
Characteristic Off Characteristics(1) IDSS IDSS IGSS -- -- -- -- -- -- 10 1 1 Adc Adc Adc Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage(1) (VDS = 10 Vdc, ID = 200 Adc) Gate Quiescent Voltage(3) (VDD = 28 Vdc, ID = 1900 mAdc, Measured in Functional Test) Drain - Source On - Voltage(1) (VGS = 10 Vdc, ID = 2.2 Adc) Dynamic Characteristics (1,2) Reverse Transfer Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss -- 1.5 -- pF VGS(th) VGS(Q) VDS(on) 1 2 0.1 2 2.8 0.21 3 4 0.3 Vdc Vdc Vdc Symbol Min Typ Max Unit
Functional Tests(3) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1900 mA, Pout = 40 W Avg., f1 = 2300 MHz, f2 = 2310 MHz and f1 = 2390 MHz, f2 = 2400 MHz, 2 - Carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. IM3 measured in 3.84 MHz Bandwidth @ 10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain Drain Efficiency Intermodulation Distortion Adjacent Channel Power Ratio Input Return Loss 1. Each side of device measured separately. 2. Part internally matched both on input and output. 3. Measurement made with device in push - pull configuration. Gps D IM3 ACPR IRL 13 22 -- -- -- 14 23.5 - 37.5 - 41 - 13 16 -- - 35 - 38 -- dB % dBc dBc dB
MRF6P23190HR6 2 RF Device Data Freescale Semiconductor
+ R1 VBIAS + C12 + C11 C10 C9 B2 Z3 RF INPUT Z1 Z2 Z4 C2 Z16 Z14 C4 R2 VBIAS + C16 + C15 C14 C13 B4 C8 C22 C23 C24 C25 C26 C6 + C28 B3 Z20 Z18 Z22 Z24 C1 DUT Z6 Z8 Z10 Z12 Z5 Z7 Z9 C5 Z13 Z11 C3 Z15 B1 Z19 Z17 Z21 Z23 C7 C17 C18 C19 C20 C21 C27
VSUPPLY
Z25
Z26
Z27
RF OUTPUT Z28
VSUPPLY
Z1, Z28 Z2 Z3 Z4 Z5, Z6 Z7, Z8 Z9, Z10 Z11, Z12 Z13, Z14 Z15, Z16
0.380 0.850 2.244 0.186 0.614 0.570 0.072 0.078 0.861 0.187
x 0.081 x 0.135 x 0.081 x 0.074 x 0.081 x 0.282 x 0.500 x 0.500 x 0.050 x 0.782
Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip
Z17, Z18 Z19, Z20 Z21, Z22 Z23 Z24 Z25 Z26 Z27 PCB
0.321 x 0.782 Microstrip 0.404 x 0.074 Microstrip 0.918 x 0.081 Microstrip 0.346 x 0.081 Microstrip 2.103 x 0.081 Microstrip 0.037 x 0.135 Microstrip 0.250 x 0.300 Microstrip 0.563 x 0.135 Microstrip Arlon GX - 0300 - 5022, 0.030, r = 2.55
Figure 1. MRF6P23190HR6 Test Circuit Schematic
Table 5. MRF6P23190HR6 Test Circuit Component Designations and Values
Part B1, B2, B3, B4 C1, C2, C3, C4 C5, C6, C7, C8 C9, C13 C10, C14, C17, C22 C11, C15 C12, C16 C18, C19, C20, C21, C23, C24, C25, C26 C27, C28 R1, R2 Ferrite Beads 5.1 pF Chip Capacitors 5.6 pF Chip Capacitors 0.01 F, 100 V Chip Capacitors 2.2 F, 50 V Chip Capacitors 22 F, 25 V Tantalum Capacitors 47 F, 16 V Tantalum Capacitors 10 F, 50 V Chip Capacitors 330 F, 63 V Electrolytic Capacitors 240 , 1/4 W Chip Resistors Description Part Number 2508051107Y0 ATC100B5R1CT500XT ATC100B5R6CT500XT C1825C103J1RAC C1825C225J5RAC ECS - T1ED226R T491D476K016AT GRM55DR61H106KA88B NACZF331M63V CRCW12062400FKTA Manufacturer Fair - Rite ATC ATC Kemet Kemet Panasonic TE series Kemet Murata Nippon Vishay
MRF6P23190HR6 RF Device Data Freescale Semiconductor 3
R1
C12 C11 C10* C9*
C20 C21
B1 B2 C5 C7
C17
C18 C19 C27
C3 C1 CUT OUT AREA C2 C4
MRF6P23190H Rev. 3
C6 B3 B4
C8
C22 R2 C16 C15 C14* C13*
C23 C24 C25 C26 C28
*Stacked.
Figure 2. MRF6P23190HR6 Test Circuit Component Layout
MRF6P23190HR6 4 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
14.4 14.2 Gps, POWER GAIN (dB) 14 13.8 13.6 13.4 13.2 13 ACPR IRL Gps IM3 3.84 MHz Channel Bandwidth PAR = 8.5 dB @ 0.01% Probability (CCDF) VDD = 28 Vdc, Pout = 40 W (Avg.), IDQ = 1900 mA 2-Carrier W-CDMA, 10 MHz Carrier Spacing D 25 24 23 22 -36 -38 -40 -42 -44 2430 D, DRAIN EFFICIENCY (%) IM3 (dBc), ACPR (dBc) -13 -15 -16 -18 -19 -21 D, DRAIN EFFICIENCY (%) IM3 (dBc), ACPR (dBc) -12 -13 -15 -16 -18 -19 2850 mA IRL, INPUT RETURN LOSS (dB) IRL, INPUT RETURN LOSS (dB)
12.8 2270
2290
2310
2330
2350
2370
2390
2410
f, FREQUENCY (MHz)
Figure 3. 2 - Carrier W - CDMA Broadband Performance @ Pout = 40 Watts Avg.
14 13.8 Gps, POWER GAIN (dB) 13.6 13.4 13.2 13 12.8 12.6 ACPR IRL Gps IM3 3.84 MHz Channel Bandwidth PAR = 8.5 dB @ 0.01% Probability (CCDF) VDD = 28 Vdc, Pout = 80 W (Avg.), IDQ = 1900 mA 2-Carrier W-CDMA, 10 MHz Carrier Spacing D
35 34 32 31 -26 -28 -30 -32 -34 2430
12.4 2270
2290
2310
2330
2350
2370
2390
2410
f, FREQUENCY (MHz)
Figure 4. 2 - Carrier W - CDMA Broadband Performance @ Pout = 80 Watts Avg.
16 15 Gps, POWER GAIN (dB) 14 13 12 11 10 0.5 IDQ = 2850 mA 2375 mA 1900 mA 1425 mA 950 mA VDD = 28 Vdc, f1 = 2345 MHz, f2 = 2355 MHz Two -Tone Measurements, 10 MHz Tone Spacing 1 10 100 500 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc)
-10 -20 -30 -40 -50 -60 -70 0.5 1425 mA 2375 mA IDQ = 950 mA 1900 mA VDD = 28 Vdc, f1 = 2345 MHz, f2 = 2355 MHz Two -Tone Measurements, 10 MHz Tone Spacing
1
10
100
500
Pout, OUTPUT POWER (WATTS) PEP
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus Output Power
Figure 6. Third Order Intermodulation Distortion versus Output Power
MRF6P23190HR6 RF Device Data Freescale Semiconductor 5
TYPICAL CHARACTERISTICS
IMD, INTERMODULATION DISTORTION (dBc) 0 -10 -20 -30 -40 -50 -60 0.1 3rd Order 5th Order VDD = 28 Vdc, Pout = 190 W (PEP) IDQ = 1900 mA, Two -Tone Measurements (f1 + f2)/2 = Center Frequency of 2350 MHz 65 63 Pout, OUTPUT POWER (dBm) 61 59 57 55 53 51 49 1 10 100 35 37 39 41 43 45 47 49 TWO -TONE SPACING (MHz) Pin, INPUT POWER (dBm) VDD = 28 Vdc, IDQ = 1900 mA Pulsed CW, 8 sec(on), 1 msec(off) f = 2350 MHz P1dB = 54.5 dBm (283.85 W) Actual P6dB = 55.73 dBm (374.11 W) P3dB = 55.1 dBm (325.54 W) Ideal
7th Order
Figure 7. Intermodulation Distortion Products versus Tone Spacing
D, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) 36 30 24 18 12 IM3 6 0 1 ACPR
Figure 8. Pulsed CW Output Power versus Input Power
-25 85_C 25_C -30_C -30 85_C D -30_C 25_C -35 -40 -45 -50 -55 10 100 200
TC = -30_C
Gps 85_C 25_C
Pout, OUTPUT POWER (WATTS) AVG.
Figure 9. 2 - Carrier W - CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power
17 16 Gps, POWER GAIN (dB) 15 14 85_C 13 12 11 1 10 100 400 Pout, OUTPUT POWER (WATTS) CW D VDD = 28 Vdc IDQ = 1900 mA f = 2350 MHz TC = -30_C 25_C Gps -30_C
60 50 D, DRAIN EFFICIENCY (%) 85_C 40 30 20 10 0 Gps, POWER GAIN (dB)
15 IDQ = 1900 mA f = 2350 MHz 14
13
12 VDD = 24 V 11 10 0 50 100 150 200 250 300 Pout, OUTPUT POWER (WATTS) CW 28 V 32 V
Figure 10. Power Gain and Drain Efficiency versus CW Output Power MRF6P23190HR6 6
Figure 11. Power Gain versus Output Power
IM3 (dBc), ACPR (dBc)
VDD = 28 Vdc, IDQ = 1900 mA f1 = 2345 MHz, f2 = 2355 MHz 2-Carrier W-CDMA, 10 MHz Carrier Spacing, 3.84 MHz Channel Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF)
RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
108
MTTF (HOURS)
107
106
105 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 28 Vdc, Pout = 40 W Avg., and D = 23.5%. MTTF calculator available at http:/www.freescale.com/rf. Select Tools/ Software/Application Software/Calculators to access the MTTF calcu- lators by product.
Figure 12. MTTF versus Junction Temperature
W - CDMA TEST SIGNAL
100 10 PROBABILITY (%) 1 (dB) 0.1 0.01 0.001 0.0001 0 2 4 6 8 10 PEAK -TO-AVERAGE (dB) W-CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. IM3 Measured in 3.84 MHz Bandwidth @ 10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF
+20 +30 0 -10 -20 -30 -40 -50 -60 -70 -80 -25
3.84 MHz Channel BW
-ACPR in +ACPR in 3.84 MHz BW 3.84 MHz BW -IM3 in 3.84 MHz BW -20 -15 -10 -5 0 5 10
+IM3 in 3.84 MHz BW 15 20 25
f, FREQUENCY (MHz)
Figure 13. CCDF W - CDMA 3GPP, Test Model 1, 64 DPCH, 67% Clipping, Single - Carrier Test Signal
Figure 14. 2-Carrier W-CDMA Spectrum
MRF6P23190HR6 RF Device Data Freescale Semiconductor 7
f = 2400 MHz Zo = 50
Zsource
f = 2300 MHz
f = 2400 MHz
Zload
f = 2300 MHz
VDD = 28 Vdc, IDQ = 1900 mA, Pout = 40 W Avg. f MHz 2300 2310 2320 2330 2340 2350 2360 2370 2380 2390 2400 Zsource 9.31 - j12.12 9.27 - j11.93 9.24 - j11.75 9.21 - j11.57 9.18 - j11.40 9.16 - j11.23 9.14 - j11.06 9.13 - j10.90 9.12 - j10.75 9.11 - j10.59 9.11 - j10.45 Zload 7.89 - j32.78 7.61 - j32.19 7.35 - j31.62 7.10 - j31.06 6.86 - j30.53 6.64 - j30.01 6.43 - j29.51 6.23 - j29.02 6.04 - j28.55 5.86 - j28.09 5.68 - j27.64
Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload = Test circuit impedance as measured from drain to drain, balanced configuration. Device Under Test Output Matching Network
Input Matching Network
+
-
- Z source Z
+ load
Figure 15. Series Equivalent Source and Load Impedance MRF6P23190HR6 8 RF Device Data Freescale Semiconductor
PACKAGE DIMENSIONS
2X
Q bbb
M
A
A G4 L
1 2
TA
M
B
M
B
NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4. RECOMMENDED BOLT CENTER DIMENSION OF 1.52 (38.61) BASED ON M3 SCREW. DIM A B C D E F G H K L M N Q R S aaa bbb ccc INCHES MIN MAX 1.615 1.625 0.395 0.405 0.150 0.200 0.455 0.465 0.062 0.066 0.004 0.007 1.400 BSC 0.082 0.090 0.117 0.137 0.540 BSC 1.219 1.241 1.218 1.242 0.120 0.130 0.355 0.365 0.365 0.375 0.013 REF 0.010 REF 0.020 REF DRAIN DRAIN GATE GATE SOURCE MILLIMETERS MIN MAX 41.02 41.28 10.03 10.29 3.81 5.08 11.56 11.81 1.57 1.68 0.10 0.18 35.56 BSC 2.08 2.29 2.97 3.48 13.72 BSC 30.96 31.52 30.94 31.55 3.05 3.30 9.01 9.27 9.27 9.53 0.33 REF 0.25 REF 0.51 REF
3 4X
4
K aaa
M
4X
(FLANGE)
B
D
TA
M
B
M
ccc ccc
M
M
TA
(LID)
M
B
M
TA N (LID)
M
B
M
R
H C
F
E
PIN 5 M (INSULATOR) bbb
M
T
SEATING PLANE
(INSULATOR)
S
bbb
M
TA
M
B
M
TA
M
B
M
STYLE 1: PIN 1. 2. 3. 4. 5.
CASE 375D - 05 ISSUE E NI - 1230
MRF6P23190HR6 RF Device Data Freescale Semiconductor 9
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process. Application Notes * AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins * EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision 2 Date Mar. 2007 Description * Removed Lower Thermal Resistance and Low Gold Plating bullets from Features section as functionality is standard, p. 1 * Removed Total Device Dissipation from Max Ratings table as data was redundant (information already provided in Thermal Characteristics table), p. 1 * Added maximum CW operation limitation and derating values to the Maximum Rating table to prevent a 200C+ hot wire operating condition, p. 1 * Corrected VDS to VDD in the RF test condition voltage callout for VGS(Q), On Characteristics table, p. 2 * Removed Forward Transconductance from On Characteristics table as it no longer provided usable information, p. 2 * Updated Part Numbers in Table 5, Component Designations and Values, to RoHS compliant part numbers, p. 3 * Removed lower voltage tests from Fig. 11, Power Gain versus Output Power, due to fixed tuned fixture limitations, p. 6 * Replaced Figure 12, MTTF versus Junction Temperature with updated graph. Removed Amps2 and listed operating characteristics and location of MTTF calculator for device, p. 7 * Added Product Documentation and Revision History, p. 10
MRF6P23190HR6 10 RF Device Data Freescale Semiconductor
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MRF6P23190HR6
Document Number: RF Device Data MRF6P23190H Rev. 2, 3/2007 Freescale Semiconductor
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